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PDF 2SK1339 Fiche technique - Inchange Semiconductor

Numéro de référence 2SK1339
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
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2SK1339 Datasheet, Description
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1339
DESCRIPTION
·Drain Current ID= 3A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±20
Drain Current-continuous@ TC=25
3
Total Dissipation@TC=25
80
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.83 /W
Thermal Resistance,Junction to Ambient 35 /W
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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