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PDF 1SS196 Fiche technique - JCET

Numéro de référence 1SS196
Description SWITCHING DIODE
Fabricant JCET 
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1SS196 Datasheet, Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS196
Switching Diode
FEATURES
Low forward voltage
Fast reverse recovery time
MARKING: G3
G3
SOT-23
1
3
2
Maximum Ratings @Ta=25
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limit
85
80
300
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
/W
Electrical Characteristics @Ta=25
Parameter
Symbol
Reverse breakdown voltage
V(BR)
VF1
Forward voltage
Reverse current
VF2
VF3
IR1
IR2
Capacitance between terminals
CT
Reverse recovery time
t rr
www.cj-elec.com
Min Typ Max Unit
Conditions
80 V IR=100µA
0.60
V IF=1mA
0.72
0.90 1.2
0.1
V IF=10mA
V IF=100mA
uA VR=30V
0.5 uA VR=80V
0.9 3.0 pF VR=0,f=1MHz
1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR
1 B,Aug,2014
1SS196 Fiche technique
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Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
ș
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0° 8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0° 8°
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3
B,Aug,2014

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