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PDF 2SJ126 Fiche technique ( Data sheet )

Numéro de référence 2SJ126
Description P-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
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2SJ126 Datasheet, Description
INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2SJ126
DESCRIPTION
·Low Drain-Source ON Resistance
·High Forward Transfer Admittance
·Low Leakage Current
·Enhancement-Mode
APPLICATIONS
·High speed switching application
·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
-60
±20
V
V
ID Drain Current-continuous@ TC=37-10 A
Ptot Total Dissipation@TC=25
40 W
Tj Max. Operating Junction Temperature -55~150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 /W
75 /W
isc websitewww.iscsemi.cn
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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