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PDF 2SD1896 Fiche technique ( Data sheet )

Numéro de référence 2SD1896
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
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2SD1896 Datasheet, Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1896
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·High Collector Power Dissipation
·Good Linearity of hFE
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
ICM Collector Current-Pulse
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
10 A
2
W
40
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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