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PDF 2SD1857 Fiche technique ( Data sheet )

Numéro de référence 2SD1857
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor Logo 



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2SD1857 Datasheet, Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage. (BVCEO = 120V)
·Low collector output capacitance.
·High transition frequency. (fT = 50MHz)
·Complement to Type 2SB1236
APPLICATIONS
·Designed for audio amplifier,
voltage regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 1.5 A
ICP Collector Current-Pulse
3A
PC Collector Power Dissipation
10 W
TJ Junction Temperature
Tstg Storage Temperature Range
150
-55~150
Product Specification
2SD1857
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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