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PDF 2SD1803 Fiche technique ( Data sheet )

Numéro de référence 2SD1803
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor Logo 



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2SD1803 Datasheet, Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current-IC= 5.0A
·Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A
·Good Linearity of hFE
·Complement to Type 2SB1203
APPLICATIONS
·Relay drivers,high-speed inverters,converters,
and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5.0 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
8.0 A
1.0
W
20
150
Tstg Storage Temperature Range
-55~150
isc Product Specification
2SD1803
isc websitewww.iscsemi.cn
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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