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PDF 2SD1683 Fiche technique ( Data sheet )

Numéro de référence 2SD1683
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
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2SD1683 Datasheet, Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1683
DESCRIPTION
·High Collector Current-IC= 4A
·Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2A
·Complement to Type 2SB1143
APPLICATIONS
·Designed for use in voltage regulations, relay drivers, lamp
drivers and electrical equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICP Collector Current-Pulse
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
60 V
50 V
6V
4A
6A
1.5
W
10
150
-55~150
isc websitewww.iscsemi.cn
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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