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PDF 2SD1662 Fiche technique ( Data sheet )

Numéro de référence 2SD1662
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
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2SD1662 Datasheet, Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPLICATIONS
·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100 V
5V
IC Collector Current-Continuous
15 A
IB Base Current- Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
1A
100 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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