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MX29LV321DB Datasheet PDF - Macronix International


FLASH MEMORY

Numéro de référence MX29LV321DB
Description FLASH MEMORY
Fabricant Macronix International 
Logo Macronix International Logo 
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MX29LV321DB Datasheet

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MX29LV321DB Fiche technique
MX29LV321D T/B
AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY......................................................................... 22
SECTOR ERASE........................................................................................................................................... 23
CHIP ERASE................................................................................................................................................ 24
SECTOR ERASE SUSPEND........................................................................................................................ 24
SECTOR ERASE RESUME.......................................................................................................................... 25
AUTOMATIC SELECT OPERATIONS........................................................................................................... 25
AUTOMATIC SELECT COMMAND SEQUENCE.......................................................................................... 25
READ MANUFACTURER ID OR DEVICE ID................................................................................................ 26
SECURITY SECTOR LOCK STATUS........................................................................................................... 26
VERIFY SECTOR GROUP PROTECTION................................................................................................... 26
SECURITY SECTOR FLASH MEMORY REGION........................................................................................ 26
FACTORY LOCKED: SECURITY SECTOR PROGRAMMED AND PROTECTED AT THE FACTORY ....... 26
CUSTOMER LOCKABLE: SECURITY SECTOR NOT PROGRAMMED OR PROTECTED AT THE
FACTORY...................................................................................................................................................... 27
ENTER AND EXIT SECURITY SECTOR...................................................................................................... 27
RESET OPERATION..................................................................................................................................... 28
COMMON FLASH MEMORY INTERFACE (CFI) MODE...................................................................................... 29
QUERY COMMAND AND COMMAND FLASH MEMORY INTERFACE (CFI) MODE.................................. 29
Table 4-1. CFI mode: Identification Data Values............................................................................................ 29
Table 4-2. CFI Mode: System Interface Data Values..................................................................................... 29
Table 4-3. CFI Mode: Device Geometry Data Values.................................................................................... 30
Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values.............................................. 31
ELECTRICAL CHARACTERISTICS..................................................................................................................... 32
ABSOLUTE MAXIMUM STRESS RATINGS................................................................................................. 32
OPERATING TEMPERATURE AND VOLTAGE............................................................................................ 32
DC CHARACTERISTICS............................................................................................................................... 33
SWITCHING TEST CIRCUITS...................................................................................................................... 34
SWITCHING TEST WAVEFORMS............................................................................................................... 34
AC CHARACTERISTICS............................................................................................................................... 35
WRITE COMMAND OPERATION......................................................................................................................... 36
Figure 1. COMMAND WRITE OPERATION.................................................................................................. 36
READ/RESET OPERATION.................................................................................................................................. 37
Figure 2. READ TIMING WAVEFORMS........................................................................................................ 37
Figure 3. RESET# TIMING WAVEFORM..................................................................................................... 38
ERASE/PROGRAM OPERATION......................................................................................................................... 39
Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM......................................................................... 39
Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART............................................................... 40
Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM................................................................... 41
Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART....................................................... 42
Figure 8. ERASE SUSPEND/RESUME FLOWCHART................................................................................. 43
Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORM............................................................................ 44
Figure 10. ACCELERATED PROGRAM TIMING DIAGRAM........................................................................ 44
P/N:PM1358
REV. 1.1, OCT. 02, 2009
3

3 Page

MX29LV321DB pdf
MX29LV321D T/B
GENERAL DESCRIPTION
MX29LV321DT/B is a 32Mbit flash memory that can be organized as 2,097,152 words. These devices operate
over a voltage range of 2.7V to 3.6V typically using a 3V power supply input. The memory array is divided into 64
equal 64 Kilo byte blocks. However, depending on the device being used as a Top-Boot or Bottom-Boot device,
the top or the bottom first block is further subdivided into 8 equal 4Kword blocks. The outermost two sectors at
the top or at the bottom are respectively the boot blocks for this device. This flash memory also provides an ad-
ditional factory lockable or customer lockable 32Kword sector to provide security feature.
The MX29LV321DT/B is offered in a 48-pin TSOP and a 48-ball TFBGA JEDEC standard package. These pack-
ages are offered lead-free versions that are compliant to the RoHS specifications. The software algorithm used
for this device also adheres to the JEDEC standard for single power supply devices. These flash parts can be
programmed in system or on commercially available EPROM/Flash programmers.
Separate OE# and CE# (Output Enable and Chip Enable) signals are provided to simplify system design. When
used with high speed processors, the 90ns read access time of this flash memory permits operation with minimal
time lost due to system timing delays.
The automatic write algorithm provided on Macronix flash memories perform an automatic erase prior to write.
The user only needs to provide a write command to the command register. The on-chip state machine automati-
cally controls the program and erase functions including all necessary internal timings. Since erase and write
operations take much longer time than read operations, erase/write can be interrupted to perform read opera-
tions in other sectors of the device. For this, Erase Suspend operation along with Erase Resume operation are
provided. Data# polling or Toggle bits are used to indicate the end of the erase/write operation.
These devices are manufactured at the Macronix fabrication facility using the time tested and proven MXIC's
advanced technology. This proprietary non-epi process provides a very high degree of latch-up protection for
stresses up to 100 milliamperes on address and data pins from -1V to 1.5xVCC.
With low power consumption and enhanced hardware and software features, this flash memory retains data reli-
ably for at least 20 years. Erase and programming functions have been tested to meet a typical specification of
100,000 cycles of operation.
P/N:PM1358
REV. 1.1, OCT. 02, 2009
6

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