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BCP69T1G Datasheet PDF - ON Semiconductor


PNP Silicon Epitaxial Transistor

Numéro de référence BCP69T1G
Description PNP Silicon Epitaxial Transistor
Fabricant ON Semiconductor 
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1 Page
		
BCP69T1G Datasheet
BCP69T1G Fiche technique
BCP69T1G, NSVBCP69T1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.35
0.30
0.25
IC/IB = 10
150°C
0.20
25°C
0.15
0.10
55°C
0.05
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1
1.4
IC/IB = 10
1.2
1.0
55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
10
1.2
1.1 VCE = 1 V
1.0
0.9 55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Voltage vs. Collector
Current
160
120
80
40
0
Cob
Cib
TJ = 25°C
Cib
Cob
- 5.0 -1.0
-1.0 - 2.0
-1.5 - 2.0
- 3.0 - 4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitances
- 2.5
- 5.0
10
10 ms
1 s 100 ms
1 ms
1.0
Thermal Limit
 0.1
Single Pulse Test
@ TA = 25°C
0.01
0.1
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Safe Operating Area
100
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