SiHD5N50D Fiche technique PDF - DataSheet.fr

SiHD5N50D Datasheet PDF


SiHD5N50D Fonction - D Series Power MOSFET - Vishay

Numéro de référence SiHD5N50D
Description D Series Power MOSFET
Fabricant Vishay 
Logo Vishay Logo 
avant-première
		

No Preview Available !

SiHD5N50D Datasheet, Description
www.vishay.com
SiHD5N50D
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C ()
Qg (max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
550
VGS = 10 V
20
3
5
Single
1.5
DPAK
(TO-252)
D
D
G
GS
S
N-Channel MOSFET
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
Available
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHD5N50D-E3
SiHD5N50D-GE3
SiHD5N50DT1-GE3
SiHD5N50DT4-GE3
SiHD5N50DT5-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt (d)
TJ = 125 °C
Soldering Recommendations (Peak Temperature)c
for 10 s
ID
IDM
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
LIMIT
500
± 30
30
5.3
3.4
10
0.83
23
104
- 55 to + 150
24
0.28
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S13-1489-Rev. B, 01-Jul-13
1
Document Number: 91499
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





Constitution 9 Pages
Télécharger[ SiHD5N50D.PDF ]

Liens de partage


SiHD5N50D Fiche technique


Fiche technique recommandé

RéférenceDescriptionFabricant
SiHD5N50D  SiHD5N50D PDF - VishayD Series Power MOSFETVishay
Vishay



Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.fr    |   2017   |  Contactez-nous  |  Nouvelle mise à jour   |   English