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SiHD5N50D Datasheet PDF - Vishay


D Series Power MOSFET

Numéro de référence SiHD5N50D
Description D Series Power MOSFET
Fabricant Vishay 
Logo Vishay Logo 
avant-première
9 Pages
		
SiHD5N50D Datasheet

1 Page

SiHD5N50D Fiche technique
www.vishay.com
SiHD5N50D
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
TOP 15 V
14 V
13 V
12 V
9 11 V
10 V
9V
TJ = 25 °C
6
8V
3
7V
6V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3
ID = 2.5 A
2.5
2
1.5
1 VGS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
8
TOP 15 V
14 V
13 V
12 V
6
11 V
10 V
9.0 V
8.0 V
7.0 V
4
6.0 V
5.0 V
TJ = 150 °C
2
1000
100
10
Ciss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Crss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1
0 100 200 300 400 500
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12
9
6
3 TJ = 150 °C
TJ = 25 °C
0
0 5 10 15 20
VGS, Gate-to-Source Voltage (V)
25
Fig. 3 - Typical Transfer Characteristics
24
VDS = 400 V
20
VDS = 250 V
VDS = 100 V
16
12
8
4
0
0 3 6 9 12 15 18
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-1489-Rev. B, 01-Jul-13
3
Document Number: 91499
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3 Page

SiHD5N50D pdf
www.vishay.com
SiHD5N50D
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
Driver same type as D.U.T.
ISD controlled by duty factor “D”
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91499.
S13-1489-Rev. B, 01-Jul-13
6
Document Number: 91499
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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